The influence of enhanced hydrostatic pressure on evolution of dislocations in self-implanted Si during annealing at different temperatures was investigated by means of electron microscopy methods. It was found that the main cause of the pressure impact differs for various annealing temperatures. The annealing under enhanced pressure at lower temperature (1070K) has a negligible effect on structure of dislocations located in a thin layer (end-of-range defects). At this temperature, enhanced pressure mainly increased the density of microdefects with O precipitation. It was found that after high-temperature annealing (1400K), enhanced hydrostatic pressure reduces dislocation density near the surface; however, dislocations extended deeper into the substrate as compared to the samples annealed under atmospheric pressure. The effect was attributed mainly to the reduction of Si interstitial-atoms migration towards the surface due to increase in energy necessary to make Si interstitial atom occupy a lattice site at the surface.

Hydrostatic Pressure Effect on Dislocation Evolution in Self-Implanted Si Investigated by Electron Microscopy Methods. M.Wzorek, A.Czerwinski, J.Ratajczak, A.Misiuk, J.Kątcki: Vacuum, 2007, 81[10], 1229-32