Multiple implantation of O ions with energies of 0.1 to 1.5MeV at doses of 7 x 1013 to 2 x 1014/cm2 and subsequent annealing in a Cl-containing atmosphere at 900C for 4h give rise to dislocation-related luminescence in p-Si. A p → n conductivity-type conversion was also observed in this case in the surface layer of Si, which indicated that electrically active donor centres were formed in the process. Preliminary heat treatment of wafers covered with an Er-doped film of tetraethoxysilane in Ar at 1250C for 1h does not preclude the appearance of dislocation-related luminescence, but affects the parameters of the dislocation-related lines (peak positions and intensities).

Dislocation-Related Luminescence in Silicon, Caused by Implantation of Oxygen Ions and Subsequent Annealing. N.A.Sobolev, B.Y.Ber, A.M.Emelyanov, A.P.Kovarskiĭ, E.I.Shek: Semiconductors, 2007, 41[3], 285-7