Implantation of Si ions with an energy of 100keV at a dose of 1017/cm2 into n-type float-zone Si does not lead to the formation of an amorphous layer. Subsequent annealing in a Cl-containing atmosphere at 1100C gave rise to dislocation-related luminescence. The intensity of the dominant D1 line peaked at a wavelength of ∼1.54μm grew as the annealing time was increased from 0.25 to 1h.Dislocation-Related Luminescence in Single-Crystal Silicon Subjected to Silicon Ion Implantation and Subsequent Annealing. N.A.Sobolev, A.M.Emelyanov, V.I.Sakharov, I.T.Serenkov, E.I.Shek, D.I.Tetelbaum: Semiconductors, 2007, 41[5], 537-9