The effect of hydrostatic pressure on the crystal structure of annealed self-implanted Si was investigated by transmission electron microscopy and scanning electron microscopy observation of selectively etched samples. 3°-angle bevel mechanical polishing allowed determining depth distributions of dislocations. The effect of enhanced hydrostatic pressure on recrystallization and dislocation evolution depending on annealing temperature was discussed. The structure of defects in annealed samples was correlated with photoluminescence spectra on the basis of transmission electron microscopy analysis.

Defect Structure in Self-Implanted Silicon Annealed under Enhanced Hydrostatic Pressure - Electron Microscopy Study. M.Wzorek, A.Czerwinski, J.Ratajczak, A.Misiuk, B.Surma, J.Kątcki: Physica Status Solidi C, 2007, 4[8], 3020-4