Measurements were made of the photoluminescence spectra of In-implanted Si and observed a sharp line known as P-line and a broad band consisting of 3 emission bands. The dependence of the photoluminescence intensities upon the annealing temperature and the excitation power density suggested that the interstitial In atoms were related to the P-line and the broad band. The dependence of the photoluminescence intensities on the sample temperature showed that the P-line and the broad band were due to the different origins. The comparison of the photoluminescence spectra for the different penetration depths of the excitation light indicated that the defects for the P-line were distributed deeper than those for the broad band. Considering the obtained results, it was concluded that both the P-line and the broad band were due to the defect clusters with In atoms and that the structures of the defect clusters were different between the P-line and the broad band. Defect-Related Photoluminescence in Indium-Implanted Silicon. K.Terashima, M.Horikawa: Physica B, 2007, 401-402, 134-7