A preliminary deep level transient spectroscopic study was made of the charge traps produced as a function of implantation angle for 70keV H ions implanted into n-type Si(100) crystals. The defect types, concentrations and their depth profiles were examined as a function of implantation angle. The experimental results were also compared to the vacancy profiles predicted by a Monte-Carlo binary collision code.

Angular Dependence of Defect Formation in H-Implanted Silicon Studied Using Deep Level Transient Spectroscopy. B.J.Villis, J.C.McCallum: Nuclear Instruments and Methods in Physics Research B, 2007, 257[1-2], 212-6