A study was made of the effect of the order and dose of H and He sequential implantation on H interaction with Si lattice defects. systematic infra-red absorption measurements were used to investigate the evolution of hydrogenated point defects complexes during isothermal annealing. This analysis combined with the electron microscopy data led to the identification of the infra-red absorption modes corresponding to the formation of the partially amorphized layer. The obtained results provide an important input for the optimization of the implantation conditions in order to achieve fracture in Si in the wide temperature range.

The Effect of Order and Dose of H and He Sequential Implantation on Defect Formation and Evolution in Silicon. P.Nguyen, K.K.Bourdelle, T.Maurice, N.Sousbie, A.Boussagol, X.Hebras, L.Portigliatti, F.Letertre, A.Tauzin, N.Rochat: Journal of Applied Physics, 2007, 101[3], 033506