After implantation, Si:H samples were annealed at 450 and 650C under atmospheric and enhanced hydrostatic pressure (1.1GPa). Defect structure of as-implanted and processed Si:H was determined by X-ray scattering methods. Two types of defect clusters contributing to diffuse scattering were revealed: defects produced by H diffusion and characterized by small dimensions with a concentration dependent upon the annealing temperature, and rather large bubbles and platelets produced due to H agglomeration at defects with negative dilatation. The samples annealed under high pressure contained large defects with the double force tensor equivalent to the dislocation loops one. It was found that the high pressure heat treatment retards the H diffusion. Distribution of diffuse scattering around the 004 reciprocal lattice point for each type of defects was simulated and compared with the experimental data.

Defect Structure of Silicon Crystals Implanted with H2+ Ions. A.Shalimov, K.D.Shcherbachev, J.Bak-Misiuk, A.Misiuk: Physica Status Solidi A, 2007, 204[8], 2638-44