A study was made of the feasibility of mechanistic modelling of the transient behavior of defects and carriers in bipolar Si devices exposed to pulses of MeV neutrons. This approach entailed a detailed, finite-element treatment of the

diffusion, field-drift and reactions of well-established primal defects and reacted states, taking into account the localization of displacement damage within secondary cascades. The modelling captures a variety of the properties of pulse-neutron-irradiated transistors observed from electrical measurements and deep-level transient spectroscopy, using parameter values consistent with independently available information.

Modeling Fast-Transient Defect Evolution and Carrier Recombination in Pulse-Neutron-Irradiated Si Devices. S.M.Myers, W.R.Wampler, P.J.Cooper, D.B.King: Physica B, 2007, 401-402, 473-6