In situations where defects were clustered and the number of defects within a cluster approached the doping level, shallow defects states could be only partially filled in equilibrium. Both the equilibrium filling and the kinetic capture dynamics of the Si divacancy, V2, in neutron-damaged Si were modelled. A simple electrostatic model which assumes that V2 defects have the same spatial distribution as a simulation of vacancy defects following neutron irradiation was able to account for the observed capture kinetics. This electrostatic model does not, however, explain the large V2 asymmetry typical of neutron damaged Si.

Effects of Defect Clustering in Neutron Irradiated Silicon. C.H.Seager, R.M.Fleming, D.V.Lang, P.J.Cooper, E.Bielejec, J.M.Campbell: Physica B, 2007, 401-402, 491-4