Spatially-resolved luminescence measurements were performed on ribbon-grown Si samples. It was found that the band-edge luminescence exhibited anomalous temperature behavior, namely an increase in the radiation intensity with temperature. Phosphorus diffusion gettering was found to enhance this effect. The anomalous temperature behavior was attributed to non-radiative recombination governed by shallow traps. A shift in the phonon replica of the band edge luminescence peak was observed and associated with tensile stress.

Photoluminescence Study on Defects in Multicrystalline Silicon. T.Arguirov, W.Seifer, G.Jia, M.Kittler: Semiconductors, 2007, 41[4], 436-9