Defects in thin film Si with various structures ranging from amorphous to microcrystalline were investigated by electron spin resonance with emphasis on amorphous material prepared close to the transition to crystalline growth. Electron beam irradiation and stepwise annealing was used for reversible variation of the defect density over three orders of magnitude. The electron irradiation enhanced mainly the native paramagnetic defects. Additional resonances were found as satellites to the central line, which anneal rapidly at below 100C. These features were most pronounced for the amorphous material prepared close to the transition to crystalline growth.

Defects in Thin Film Silicon at the Transition from Amorphous to Microcrystalline Structure. O.Astakhov, R.Carius, Y.Petrusenko, V.Borysenko, D.Barankov, F.Finger: Physica Status Solidi - Rapid Research Letters, 2007, 1[2], R77-9