The influence of the interface shape, between a seed and the grown crystal, upon dislocation generation behavior near to the interface in Czochralski-grown Si crystal was investigated by using heavily B-doped or heavily B and Ge co-doped Si seeds. When the interface shape was convex toward the melt dislocations were generated near the interface, while dislocation generation was suppressed when the shape was planar. The seed with the convex interface sustains larger shear stress than that with the planar interface, and in the case dislocations were generated by thermal stress related to the interface shape at the edge of the interface.

Influence of Seed/Crystal Interface Shape on Dislocation Generation in Czochralski Si Crystal Growth. T.Taishi, Y.Ohno, I.Yonenaga, K.Hoshikawa: Physica B, 2007, 401-402, 560-3