Spectral positions of dislocation-related luminescence peaks from dislocation loops located close to a p-n junction in Si were shifted by carrier injection level. It was supposed that the excitonic transition energies of dislocation-related luminescence were reduced by an effective electric field at dislocation sites due to quadratic Stark effect. The field results from built-in junction field reduced by carrier injection. A constant of the shift, obtained from fitting of the data with quadratic Stark effect equation, was 0.0186meV/(kV/cm)2. The effect could explain the diversity of dislocation-related luminescence spectra in Si and may allow tuning and modulation of dislocation-related luminescence for future photonic applications.

Influence of Electric Field on Spectral Positions of Dislocation-Related Luminescence Peaks in Silicon - Stark Effect. T.Mchedlidze, T.Arguirov, M.Kittler, T.Hoang, J.Holleman, J.Schmitz: Applied Physics Letters, 2007, 91[20], 201113