It was shown here that dislocation networks in Si formed by direct wafer bonding emitted a quartet of luminescence D-lines. The D-line spectrum could be tailored by the structure of the dislocation network. The D1 or D3, with a wavelength of 1.5 or 1.3μm respectively, could be made dominating in the luminescence spectrum. An external bias voltage applied to the bonded interface could significantly enhance the luminescence intensity of D-lines.

Enhancement of IR Emission from a Dislocation Network in Si Due to an External Bias Voltage. X.Yu, O.F.Vyvenko, M.Reiche, M.Kittler: Materials Science and Engineering C, 2007, 27[5-8], 1026-9