The influence of B-induced dislocation loops on the luminescence efficiency of Si-based light-emitting diodes was investigated. Luminescence measurements and transmission-electron-microscopy images from devices fabricated by B implantation into crystalline Si, and subsequently processed under different conditions to form dislocation loops of different size and densities, were compared. Light emitting devices were also fabricated in an otherwise identical but a pre-amorphized substrate, to prevent B-induced loop formation. The results demonstrate a strong correlation between the dislocation loop density and areal coverage, and the light emission efficiency. The devices produced in the pre-amorphized substrate, without dislocation loops, exhibited strongly quenched light emission.

Dislocation Engineered Silicon Light Emitting Devices. M.A.Lourenço, M.Milosavljević, G.Shao, R.M.Gwilliam, K.P.Homewood: Thin Solid Films, 2007, 515[22], 8113-7