It was recalled that the strain field could be intensified at a sharp feature, such as an edge or a corner, thus injecting dislocations. The strain field at an edge was singular and was often a linear superposition of two modes of different exponents. The relative contributions of the two modes was characterized by a mode angle, and the critical slip systems as the amplitude of the load increases were determined. The critical residual stress in a thin-film stripe bonded on a Si substrate were calculated.

Split Singularities and Dislocation Injection in Strained Silicon. M.Feron, Z.Zhang, Z.Suo, M.Feron: Journal of Applied Physics, 2007, 102[2], 023502