A study was made of dislocation-related defects in B-doped p-type Si crystals grown by the edge-defined film-fed growth and float-zone method. Deep level transient spectroscopy was used to identify electrically active defects. An  Ev+0.33eV level was observed in edge-defined film-fed growth Si and a Ev+0.39eV in float-zone Si. In order to measure defect capture cross sections, the intensity of the deep-level transient spectroscopy signal and peak position were examined as a function of filling-pulse duration. The traps, both in edge-defined film-fed grown and float-zone Si, exhibit a logarithmic capture kinetics, a feature typical for extended defects such as dislocations. However, the complex behavior of defects in edge-defined film-fed grown material suggested that either the dislocations were decorated with clouds of C related or metallic defects, or its close spacing produces overlap of space charge regions, affecting therefore, its electrical activity.

Dislocation-Related Deep Levels in Carbon Rich p-Type Polycrystalline Silicon. I.Capan, V.Borjanović, B.Pivac: Solar Energy Materials and Solar Cells, 2007, 91[10], 931-7