Dislocation-O impurity interaction in Czochralski-grown Si crystals was influenced by treatment at 650C under a magnetic field up to 8T. It was found that the critical stress for dislocation generation from a surface scratch varies with an intensity of the applied magnetic field and duration of the magnetic treatment. The generation of dislocations was effectively suppressed under certain conditions of the magnetic treatments. Such phenomena could not be detected in float-zone-grown Si crystals. The results were discussed in terms of spin-dependent solid-state reaction in atomic bindings with impurity atoms around dislocation core, causing immobilization of dislocations in their macroscopic generation process.

Effect of Magnetic Field on Dislocation-Oxygen Impurity Interaction in Silicon. I.Yonenaga, K.Takahashi: Journal of Applied Physics, 2007, 101[5], 053528