Photoluminescence  from He+-implanted Si (Si:He, 2 x 1016He+/cm2, 150keV) was related to its microstructure; it was tuned by processing at 720 to 1400K under (up to 1.2GPa). Processing of Si:He at 720K for 10h results in an appearance of the D2 and D3 dislocation-related photoluminescence lines, these last of the highest intensity. Only the D1 dislocation-related line of intensity increasing with hydrostatic pressure was detected after processing at 920 to 1070K. The D1 (of the highest intensity), D2 and D3 photoluminescence lines were observed after the treatment at 1270K. No dislocation-related photoluminescence was detected for Si:He processed at 1400K. The treatment of Si:He at 720 to 1270K under hydrostatic pressure made it possible to produce Si:He of specific microstructure resulting in strong photoluminescence at 0.81, 0.87 or 0.94eV.

Defect-Related Light Emission from Processed He-Implanted Silicon. J.Bak-Misiuk, A.Misiuk, P.Romanowski, A.Wnuk, J.Trela: Journal of Luminescence, 2006, 121[2], 383-6