It was noted that optical interconnects required an electrically pumped Si-based light emitter at about 1.5μm. Dislocations in Si offered a recombination centre for light emission at the desired energy. Here the radiative properties of dislocation networks, created in a well controllable manner at a certain depth of Si wafers, was reported. Dislocation networks, created by ion implantation and annealing, misfit dislocation in SiGe buffers and a novel concept of dislocations created by misoriented direct bonded Si wafers were discussed. It was demonstrated that, for a specific misorientation, a dislocation network with efficient room temperature D1 (1.55μm) emission could be generated.

Towards Silicon Based Light Emitter Utilising the Radiation from Dislocation Networks. T.Arguirov, M.Kittler, W.Seifert, X.Yu, M.Reiche: Materials Science and Engineering B, 2006, 134[2-3], 109-13