Light-emitting diodes were fabricated in which optically active centres were formed by implantation of Er ions into Si and subsequent high-temperature annealing in an oxidizing atmosphere and the p-n junction and the ohmic contact were formed by chemical vapor deposition of polycrystalline Si layers doped with B and P, respectively. The luminescent properties of the light-emitting diodes were studied. Use of polycrystalline layers made it possible to eliminate the losses in the bulk of the light-emitting Si:Er layer. These losses were inevitable if the conventional ion implantation and diffusion methods were employed. At 80K, the variation of electroluminescence spectra in the spectral range of the dislocation-related luminescence with the drive current was well described if the spectrum was decomposed into three Gaussian components whose peak positions and widths were current-independent and amplitudes linearly increased with the current. At 300K, a single peak was observed in the spectral range of the dislocation-related luminescence at ∼1.6μm. Silicon LEDs with Room-Temperature Dislocation-Related Luminescence, Fabricated by Erbium Ion Implantation and Chemical-Vapor Deposition of Polycrystalline Silicon Layers Heavily Doped with Boron and Phosphorus. N.A.Sobolev, A.M.Emelyanov, V.V.Zabrodskiĭ, N.V.Zabrodskaya, V.L.Sukhanov, E.I.Shek: Semiconductors, 2007, 41[5], 616-8