Electrical levels of the dislocation network in Si and recombination processes via these levels were studied by means of the combination of grain-boundary deep level transient spectroscopy, grain-boundary electron beam induced current and cathodoluminescence. It was found 2 deep level traps and one shallow trap existed at the interface of the bonded interface; these supply the recombination centres for carriers. The total recombination probability based on grain boundary-electron beam induced current data increased with the excitation level monotonically; however, the radiative recombination based on D1-D2 cathodoluminescence data exhibited a maximum at a certain excitation level. By applying an external bias across the bonded interface, the cathodoluminescence signal of D-lines was enhanced dramatically. These results were consistent with models involving 2 channels of recombination via the trap levels.

Combined CL/EBIC/DLTS Investigation of a Regular Dislocation Network Formed by Si Wafer Direct Bonding. X.Yu, O.Vyvenko, M.Kittler, W.Seifert, T.Mtchedlidze, T.Arguirov, M.Reiche: Semiconductors, 2007, 41[4], 458-61