It was noted that recent observations of perfect dislocations at high stresses and low temperature in Si, in accordance with the calculations of Duesbery and Joos, had solved the apparent paradox regarding the nature of mobile dislocations in Si under normal deformation conditions. However, although several experiments and calculations were consistent with those perfect dislocations being located in the shuffle set, little was known about the actual core structure of those dislocations which lay along unusual Peierls valleys: <112>/30°, <123>/41°.

High-Stress Plasticity and the Core Structures of Dislocations in Silicon. J.Rabier: Physica Status Solidi A, 2007, 204[7], 2248-55