A study was made of the electrical properties of Au-decorated dislocations in Si as studied by means of deep level transient spectroscopy. The effect of the Au was investigated by measuring deep-level transient spectra from Schottky diodes having different gold concentrations but same thermal history. Three point-defect like deep levels were found whose occurrence could be attributed to the gold. After gold in-diffusion the well-known A-, B- and C-lines of dislocated n-type Si could hardly be measured, whereas another gold-induced line appeared. This line has nearly the same emission characteristics as the gold acceptor level in non-dislocated Si but exhibited a logarithmic dependence on capture time typical for extended defects. In the lower half of the band gap, at least two gold-induced levels were measured. One of them exhibited very similar emission characteristics to the gold donor level in non-dislocated Si. Both amplitudes were logarithmically dependent on the capture time. This behaviour was tentatively attributed to substitutional dissolved gold accumulated in the vicinity of the dislocations and in the dislocation core.

Electrical Properties of Gold in Dislocated Silicon. O.Voss, V.V.Kveder, M.Seibt: Physica Status Solidi A, 2007, 204[7], 2185-9