Generation of dislocations during the growth of O precipitates was used as an alternative way of introduction of dislocation-related luminescence centres. For this purpose a multistep annealing of Cz Si samples with different initial concentrations of O was carried out. The analysis of defect density and structure was performed by optical microscopy and transmission electron microscopy. The dislocation-related luminescence appeared only after a growth stage, while its intensity strongly depended on the duration of the preliminary nucleation treatment. The duration of growth annealing had a strong influence on the spectral distribution of the dislocation-related luminescence intensity. No correlation was found between a particular defect density, defined by transmission electron microscopy, and the shape of luminescence bands. Therefore, it was concluded that the cause of the gradual dislocation-related luminescence transformation was redistribution of O, collected near dislocations.

Radiative Properties of Dislocations Generated around Oxygen Precipitates in Si. E.A.Steinman, A.N.Tereshchenko, V.Y.Reznik, R.J.Falster: Physica Status Solidi A, 2007, 204[7], 2238-47