The deep level centres introduced by plastic deformation at 620C in n-type Si were quantitatively studied by the electron beam induced current and deep level transient spectroscopy techniques. It was shown that the most efficient deformation-induced electrically active defects in Si were located in the dislocation trails. The deep level spectrum associated with these defects was obtained.

Electrical Properties of Dislocation Trails in n-Si. O.V.Feklisova, E.B.Yakimov: Physica Status Solidi C, 2007, 4[8], 3105-9