It was shown that moving 60° dislocations in Si as well as in SiGe generate high density of extended defects in their slip plane. As a result, the plastic deformation introduces in the crystal volume in addition to the dislocations a very dense system of extended defects, spatially separated from dislocations. The electron beam induced current imaging revealed strong recombination contrast associated with these extended defects.

Structure and Recombination Properties of Extended Defects in the Dislocation Slip Plane in Silicon. V.Eremenko, E.Yakimov, N.Abrosimov: Physica Status Solidi C, 2007, 4[8], 3100-4