An investigation was made of the effect of Cu contamination upon dislocation-related luminescence in Si. The Cu was known to be a very fast diffuser with high solubility. Float-zone Si samples were plastically deformed at 950C up to dislocation density of about 107/cm2. Cu diffusion was performed by diffusion at 950C from a quartz ampoule contaminated with Cu. The presence and concentration of luminescent Cu centres was evaluated from the excitation dependence of the Cu bound exciton no-phonon line at 1.014eV, which was activated after annealing at 1100C and rapid quenching in the water. Isochronous annealing of the samples (300 to 600C, 600s) revealed quite a different behavior of D4 and D1/D2 lines. It was assumed that a strong decrease of D1/D2 line intensity in annealing interval of 400 to 500C could be attributed to passivation of D1/D2 luminescence centres by Cu atoms.

Influence of Cu Contamination on Dislocation Related Luminescence. E.A.Steinman, A.N.Tereshchenko: Physica Status Solidi C, 2007, 4[8], 3095-9