Decay of the supersaturated O solid solution during annealing at 500 to 800C was studied in plastically deformed Si crystals. Plastic deformation to up to 4 to 5% was found to increase significantly the rate of decay. In samples deformed at 700C, the decay was governed by the O diffusion not to dislocations but to other defects created during deformation. These defects recovered due to the short annealing at 1150C. In the annealed samples, the decay of O solution was determined by the O diffusion to dislocations. In both cases the activation energy of O transport at 500 to 700C was about 1.5eV.

Oxygen Gettering at Defects Introduced by Plastic Deformation in Silicon. N.Yarykin, E.Hieckmann, V.I.Vdovin: Physica Status Solidi C, 2007, 4[8], 3070-4