The luminescence behaviors of dislocation networks in directly bonded Si wafers were investigated. The individual dislocations were observed in the sample bonded with extreme small misorientation angles by electron beam induced current technique. The temperature dependence of electron beam induced current contrast of the dislocation lines showed that its contamination degree was smaller than 104/cm. The cathodoluminescence from the dislocation networks showed D1-line existed in all the bonded samples, often along with D2-line. The D3/D4-lines could also be obtained by tuning the misorientations. Meanwhile, the application of an external bias could effectively enhance the luminescence. Furthermore, a metal-insulator (SiOx, x < 2)-semiconductor light-emitting diode based on the bonded Si wafer was demonstrated.

Luminescence of Dislocation Network in Directly Bonded Silicon Wafers. X.Yu, M.Kittler, O.F.Vyvenko, W.Seifert, T.Arguirov, T.Wilhelm, M.Reich: Physica Status Solidi C, 2007, 4[8], 3025-9