A review was presented of dislocation-impurity interactions and of their effects upon the electronic properties of defect states in Si. Dislocations introduced by plastic deformation and O precipitation in p-type Czochralski Si were investigated using junction spectroscopy methods. A deep hole trap, named T1, was associated with dislocation-related impurity centres, while additional deep traps were related to contamination by grown-in transition metals and to clusters involving O atoms. Moreover, experimental results obtained by junction spectroscopy assessed the existence of dislocation related shallow states. These were found to be located at 70 and 60meV from the valence and conduction band edge, respectively.

Electronic States Related to Dislocations in Silicon. D.Cavalcoli, A.Cavallini: Physica Status Solidi C, 2007, 4[8], 2871-7