The mechanism of relaxation of stresses via the multiplication and motion of dislocations in the vicinity of a stress concentrator (scribe) in Si single crystals was investigated. The energy-related and dynamic characteristics of the observed processes were determined for different angles of orientation of stress concentrators with respect to the [110] direction.

On the Redistribution of Dislocations in Silicon Single Crystals in the Vicinity of Stress Concentrators. A.M.Orlov, A.A.Solovev, I.O.Yavtushenko, A.A.Skvortsov: Physics of the Solid State, 2007, 49[6], 1093-7