The influence of high magnetic-field treatments upon dislocation versus O impurity interactions in Si was investigated. The locking strength of O impurities against dislocations decreased with increase in exposed magnetic field up to 10T at room temperature and 700C. Such phenomena could not be detected in high-purity float-zone-grown Si crystals. These results suggest a spin-dependent solid-state reaction in impurity–dislocation interaction, which seems a possibility of modification of atomic configuration and displacement of crystalline defects in semiconductors.

Influence of High-Magnetic-Field on Dislocation–Oxygen Interaction in Silicon. I.Yonenaga, K.Takahashi, T.Taishi, Y.Ohno: Physica B, 2007, 401-402, 148-50