Samples containing rod-like defects and pre-characterized by the electric-dipole spin resonance method were investigated using photoluminescence and deep-level transient spectroscopy methods. Employing previously reported strict correlation between the electric-dipole spin resonance signatures of various rod-like defects structures and their structural models developed from microscopy investigations it became possible to associate photoluminescence and deep-level transient spectroscopy features with these defects. The results suggest that at low measurement temperatures, i.e. at 10K, sharp photoluminescence emission peak detected at 1405nm was related to line-interstitial defects, that detected at 1372nm to plane defects and 2 peaks detected at 1426 and 1515nm to dislocation dipoles. Two energy bands related to line-interstitial defects were positioned at 0.2 and 0.25eV from the conduction band of Si. Band-like stated associated with plane defects were positioned at about 0.5eV and those related to dislocation dipoles at 0.32 to 0.36eV below the conduction band.

Signatures of Distinct Structures Related to Rod-Like Defects in Silicon Detected by Various Measurement Methods. T.Mchedlidze, T.Arguirov, G.Jia, M.Kittler: Physica Status Solidi A, 2007, 204[7], 2229-37