A model which described Czochralski defect dynamics in the presence of N and O was proposed and solved. The reactions between vacancies and self-interstitials, N monomers and dimers, N and vacancies, and the reactions involving vacancies, O, and complexes of vacancies and O were incorporated, along with the formation of various microdefects. All microdefects were approximated as spherical clusters. The formation of all clusters was described by the classical nucleation theory. The clusters, once formed, grew by diffusion-limited kinetics. The microdefect distributions in Czochralski crystals growing under steady state as well as unsteady state were discussed.

Defect Dynamics in the Presence of Nitrogen in Growing Czochralski Silicon Crystals. M.S.Kulkarni: Journal of Crystal Growth, 2008, 310[2], 324-35