The influence of crystal defects and impurities upon the physical properties of nano-crystalline Si:H was explored. The present contribution considered defective states which were associated with crystal defects and impurities in nc-Si:H films grown by low-energy plasma-enhanced chemical vapor deposition technique. Electronic levels associated with defect states were investigated by surface photo-voltage spectroscopy and the role of defects and impurities on the conduction mechanisms at a microscopic level were investigated by conductive atomic force microscopy. The results will be compared with structural analyses

Defect Analysis of Hydrogenated Nanocrystalline Si Thin Films. A.Cavallini, D.Cavalcoli, M.Rossi, A.Tomasi, S.Pizzini, D.Chrastina, G.Isella: Physica B, 2007, 401-402, 519-22