Using the combined application of 2 characterization methods, deep-level transient spectroscopy and lifetime spectroscopy, the lifetime-limiting defect level in intentionally Al-contaminated Czochralski Si was analyzed and a complete set of defect parameters could be obtained. This Al-related defect centre was found to be located at an energy level of Et−EV = 0.44eV and exhibited an asymmetrical capture cross-section, with 3.6 x 10−13cm2 and 3.1 x 10−10cm2 being the hole and electron capture cross-sections, respectively. The investigated defect centre was attributed to the Al-O complex.

Determining the Defect Parameters of the Deep Aluminum-Related Defect Center in Silicon. P.Rosenits, T.Roth, S.W.Glunz, S.Beljakowa: Applied Physics Letters, 2007, 91[12], 122109