In the case of B, implanted into pre-amorphized Si, it was shown that the use of an atomically clean surface, which acted as a large sink during annealing, selectively removed Si interstitials rather than dopant interstitials.

Defect Engineering by Surface Chemical State in Boron-Doped Preamorphized Silicon. S.H.Yeong, M.P.Srinivasan, B.Colombeau, L.Chan, R.Akkipeddi, C.T.M.Kwok, R.Vaidyanathan, E.G.Seebauer: Applied Physics Letters, 2007, 91[10], 102112