Pre-amorphization of ultra-shallow implanted B in Si on insulator was optimized to produce an abrupt box-like doping profile with negligible electrical deactivation and significantly reduced transient enhanced diffusion. The effect was achieved by positioning the as-implanted amorphous/crystalline interface close to the buried oxide interface to minimize interstitials while leaving a single-crystal seed to support solid-phase epitaxy. Results support the idea that the interface between the Si overlayer and the buried oxide was an efficient interstitial sink.

Boron Deactivation in Preamorphized Silicon on Insulator - Efficiency of the Buried Oxide as an Interstitial Sink. J.J.Hamilton, K.J.Kirkby, N.E.B.Cowern, E.J.H.Collart, M.Bersani, D.Giubertoni, S.Gennaro, A.Parisini: Applied Physics Letters, 2007, 91[9], 092122