Deep-level transient spectroscopy data were measured on very high resistivity n-type float-zone Si detectors after irradiation with 6MeV electrons. The C interstitial annealing kinetics were investigated as a function of depth in the detector structure and related to the inhomogeneous depth distribution of O and C impurities in the devices. The results were compared with data published in previous works and point out some possible misinterpretation of deep-level transient spectroscopy data due to detector processing induced inhomogeneous distribution of impurities. Finally, a method was presented for the determination of the absolute concentration of the O and C impurities as functions of depth in devices by carefully analyzing the C interstitial annealing kinetics.

Reactions of Interstitial Carbon with Impurities in Silicon Particle Detectors. L.F.Makarenko, M.Moll, F.P.Korshunov, S.B.Lastovski: Journal of Applied Physics, 2007, 101[11], 113537