The distribution of microdefects in a Czochralski crystal was determined by the complex dynamics influenced by various reactions involving the intrinsic point defects and O, and their transport. Two-dimensional O influenced transient defect dynamics in growing Czochralski crystals were quantified and solved. The Frenkel reaction and the reactions between vacancies and O were considered. The formation of all microdefects was described by classical nucleation theory. Microdefects were assumed to be spherical clusters that grew by a diffusion-limited kinetics. The predictions of the model agree well with experimental data. Various predictions of the model and experimental results were discussed.

Defect Dynamics in the Presence of Oxygen in Growing Czochralski Silicon Crystals. M.S.Kulkarni: Journal of Crystal Growth, 2007, 303[2], 438-48