Copper decoration techniques were used for detection of the vacancy–interstitial (V–I) boundary in Czochralski Si crystal. The technique was used for delineating defects in Si previously reported and was enriched by an upgraded application of copper on the Si surface. The new procedure was based on the deposition of elementary copper on the Si surface from the copper nitrate solution. The new method was more efficient contrary and it also decreased environmental drain. Five etchants were compared in order to optimize the delineation of the V–I boundary. A defect region of the same diameter was detected by all the used etchants, supreme sensitivity was obtained with Wright's etchant. The outer diameter of the defect region observed by the copper decoration technique coincides with the V–I boundary diameter measured by OISF testing and approximately coincides with the V–I boundary diameter measured by COP testing. It was found that the copper decoration technique delineates O precipitates in Si and a dependence of V–I boundary detectability upon the size of the O precipitates was observed.

Limits of the Copper Decoration Technique for Delineating of the V–I Boundary. L.Válek, Š.Stehlík, J.Orava, M.Ďurík, J.Šik, T.Wágner: Journal of Physics and Chemistry of Solids, 2007, 68[5-6], 1157-60