The behavior of As precipitates in III-V arsenides which were grown at low temperatures was investigated. The results revealed that the doping level affected the concentration of charged defects, such as vacancies and antisite point defects, and led to the selective precipitation of excess As in homojunctions. In heterostructures, As precipitates tended to condense in materials with a lower bond-strength; due to differences in the point defect concentrations of the materials. Dislocations were found to be a vacancy source that facilitated As precipitation around them. The results indicated that column-III vacancies played an important role in As precipitation in low-temperature grown III-V arsenides.

Effects of Point Defect Distribution on Arsenic Precipitation in Low-Temperature Grown III-V Arsenides M.N.Chang, K.C.Hsieh, T.E.Nee, J.I.Chyi: Journal of Applied Physics, 1999, 86[5], 2442-7