The growing curve of light-induced dangling bonds under illumination was observed for various intensities of illumination in a-Si:H. It was fitted to a stretched exponential function and then two parameters β and τ involved in the function were estimated as a function of saturated dangling bond density, Ns. The experimental values of β, τ and Ns were compared with those calculated based upon the present model for light-induced defect creation in a-Si:H.

Dispersive Processes of Light-Induced Defect Creation in Hydrogenated Amorphous Silicon. K.Morigaki, K.Takeda, H.Hikita, P.Roca i Cabarrocas: Solid State Communications, 2007, 142[4], 232-6