Single crystals were grown by using electromagnetic Czochralski and magnetic Czochralski methods, and the effect of the melt convection induced by the electromagnetic force on point defect behavior, the shape of the crystal-melt interface, O concentration and its distribution in the crystal were experimentally investigated. When the melt rotation induced by electromagnetic force was in the same direction of the crystal rotation, the melt rotation made the crystal-melt interface concave, and the critical growth rate for defect-free crystal increased. The melt convection induced by electromagnetic force decreased the O concentration. In the case of the melt rotation due to electromagnetic force in the opposite direction to the crystal rotation, electromagnetic force results in the decrease of the critical growth rate. The point defect behavior in electromagnetic Czochralski crystal was compared with one in magnetic Czochralski crystal.

Point Defect Behavior in Si Crystal Grown by Electromagnetic Czochralski (EMCZ) Method. K.H.Kim, B.C.Sim, I.S.Choi, H.W.Lee: Journal of Crystal Growth, 2007, 299[1], 206-11