The combined use of different depth profiling positron annihilation spectroscopy gave some insights into the distribution, type and decoration of open-volume defects. Applications regarding defects produced in modified Si and at the interface between deposited thin films and the Si substrate were presented. Attention was focused on selected systems and situations potentially related to technological developments: a) identification of decorated vacancy clusters in Si implanted by light-ion (He, He+H) and evolution of the clusters with the thermal treatments; b) release of compressive stress through vacancy-like defects formation at the interface during the growth of thin (10 to 200nm thick) C films.

Decorated Vacancy Clusters in Si and Thin C Films Grown on Si Studied by Depth Profiling Positron Annihilation Spectroscopies. R.S.Brusa: Physica Status Solidi C, 2007, 4[10], 3614-9