Depth resolved positron annihilation studies of Pd/Si thin film systems were carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicated the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction, Auger electron spectroscopy and Rutherford back-scattering spectrometry have elucidated the aspects related to silicide phase formation and Si surface segregation.

Silicidation in Pd/Si Thin Film Junction - Defect Evolution and Silicon Surface Segregation. S.Abhaya, G.Amarendra, G.V.Rao, R.Rajaraman, B.K.Panigrahi, V.S.Sastry: Materials Science and Engineering B, 2007, 142[2-3], 62-8