Strained-Si/SiGe heterostructures were studied using electron beam induced currents. The effect of annealing at 800C was investigated. The electron beam induced current images obtained at different beam energies were analyzed. The analysis of images obtained showed that misfit dislocation bunches in the graded SiGe layer could not explain the cross-hatch contrast dependence upon Eb. Therefore, at least a part of this contrast should be associated with other defects located closer to the depletion region. It was assumed that dislocation trails could play the role of such defects.

EBIC Characterization of Strained Si/SiGe Heterostructures. E.B.Yakimov, R.H.Zhang, G.A.Rozgonyi, M.Seacrist: Semiconductors, 2007, 41[4], 402-6