Dislocations in strained-Si/SiGe heterostructures with differing doping concentrations were characterized by using electron beam induced current methods. Lower energy (4keV) electron beam was used to observe the defects, namely misfit dislocations and threading dislocations at the interface of strained-Si/SiGe. Fine dark lines and dark dots were appeared in the 4keV electron beam induced current images below 100K. It was found that the visibility of misfit dislocations at the upper interface depends on the specimen structure and doping concentration. The results were analyzed in term of the internal electric field related to the doping concentration in samples.

Visibility of Misfit Dislocations at the Interface of Strained Si/Si0.8Ge0.2 by EBIC. X.L.Yuan, J.Chen, S.G.Ri, S.Ito, T.Sekiguchi: Physica Status Solidi C, 2007, 4[8], 3030-6